|Bibliography, etc. Note:
|| Includes bibliographical references and index.
|Formatted Contents Note:
|| Mercury Cadmium Telluride; Contents; Series Preface; Preface; Foreword; List of Contributors; Part One -- Growth; 1 Bulk Growth of Mercury Cadmium Telluride (MCT); 2 Bulk Growth of CdZnTe/CdTe Crystals; 3 Properties of Cd(Zn)Te Relevant to Use as Substrates; 4 Substrates for the Epitaxial Growth of MCT; 5 Liquid Phase Epitaxy of MCT; 6 Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth; 7 MBE Growth of Mercury Cadmium Telluride; Part Two -- Properties; 8 Mechanical and Thermal Properties; 9 Optical Properties of MCT; 10 Diffusion in MCT; 11 Defects in HgCdTe ℗·C Fundamental.
|| Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be 'tuned' to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range.
|Source of Description Note:
|| Print version record.